RQK0204TGDQA
Switching Characteristics
DD = 10 V
VGS = 4.5 V
Dynamic Input Characteristics
16
12
40
30
20
10
0
1000
100
V
t
r
Rg = 4.7 Ω
V
DD = 20 V
10 V
5 V
P
= 5 µs
Tc = 25°C
W
VDD = 20 V
VGS
8
4
0
t
d(off)
t
10 V
d(on)
10
1
t
5 V
f
ID = 2.3 A
Tc = 25°C
VDS
0.1
1
10
0
1
2
3 4
Drain Current ID (A)
Gate Charge Qg (nc)
Input Capacitance vs.
Gate to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
250
240
230
220
210
200
190
180
1000
100
Ciss
Coss
Crss
10
1
VDS = 0 V
f = 1 MHz
VGS = 0 V
f = 1 MHz
170
–
10
–
8
–
6
–
4
–
2
0
2
4
6
8
10
0
5
10
15
20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
0.7
8
6
4
Pulse Test
Tc = 25°C
VGS = 0
0.6
0.5
0.4
0.3
10 V
5 V
ID = 10 mA
2
0
1 mA
0.2
0.1
–5, –10 V
VGS = 0 V
0
0.4
0.8
1.2
1.6
2.0
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Case Temperature Tc (°C)
Rev.3.00 Jun 12, 2006 page 5 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
