欢迎访问ic37.com |
会员登录 免费注册
发布采购

RQK0204TGDQATL-E 参数 Datasheet PDF下载

RQK0204TGDQATL-E图片预览
型号: RQK0204TGDQATL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET电源开关 [Silicon N Channel MOS FET Power Switching]
分类和应用: 开关电源开关
文件页数/大小: 7 页 / 102 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第1页浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第2页浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第4页浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第5页浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第6页浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第7页  
RQK0204TGDQA  
Main Characteristics  
Maximum Channel Power  
Dissipation Curve  
Maximum Safe Operation Area  
100  
10  
1
Operation in this area  
is limited by RDS(on)  
0.8  
1 ms  
0.6  
0.4  
0.2  
0
1
0.1  
Ta = 25°C  
1 Shot Pulse  
0.01  
0.01  
0
50  
100  
150  
0.1  
1
10  
100  
Drain to Source Voltage VDS (V)  
Ambient Temperature Ta (°C)  
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)  
Typical Output Characteristics  
8
Typical Transfer Characteristics (1)  
8
10 V  
7 V  
Pulse Test  
Tc = 25  
25°C  
75°C  
VDS = 10 V  
Pulse Test  
3.0 V  
2.8 V  
2.6 V  
2.4 V  
2.2 V  
°C  
5 V  
6
4
2
0
6
4
3.2 V  
3.4 V  
Tc = –25°C  
5 V  
2.0 V  
1.8 V  
1.6 V  
2
0
V
= 0 V  
GS  
0
1
2
3
4
5
0
2
4
6
8
10  
Gate to Source Voltage VGS (V)  
Drain to Source Voltage VDS (V)  
Gate to Source Cutoff Voltage vs.  
Case Temperature  
Typical Transfer Characteristics (2)  
1
1.5  
1.0  
0.5  
0
VDS = 10 V  
Pulse Test  
VDS = 10 V  
Pulse Test  
ID = 10 mA  
0.1  
Tc = 75°C  
25°C  
0.01  
1 mA  
0.001  
–25°C  
0.1 mA  
0.0001  
–25  
0
25 50 75 100 125 150  
0
0.5  
1
1.5  
2
2.5  
3
Case Temperature Tc (°C)  
Gate to Source Voltage VGS (V)  
Rev.3.00 Jun 12, 2006 page 3 of 6