RQK0204TGDQA
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
20
±12
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage V(BR)DSS
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±10 V, VDS = 0
VDS = 20 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 1.2 A, VGS = 4.5 VNote3
ID = 1.2 A, VGS = 2.5 VNote3
ID = 1.2 A, VDS = 10 VNote3
VDS = 10 V
Gate to source breakdown voltage
Gate to source leak current
V(BR)GSS
IGSS
—
—
V
—
±10
1
µA
µA
V
Drain to source leak current
IDSS
—
—
Gate to source cutoff voltage
Drain to source on state resistance
VGS(off)
RDS(on)
RDS(on)
|yfs|
0.4
—
—
1.4
130
204
—
100
146
3.0
127
33
mΩ
mΩ
S
—
Forward transfer admittance
Input capacitance
1.5
—
Ciss
Coss
Crss
td(on)
tr
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V
GS = 0
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
—
—
—
14
—
—
11
—
ID = 1.2 A
GS = 10 V
RL = 8.3 Ω
Rg = 4.7 Ω
V
—
28
—
Turn - off delay time
Fall time
td(off)
tf
—
24
—
—
7
—
Total gate charge
Qg
—
1.5
0.3
0.4
0.85
—
VDD = 10 V
GS = 5 V
ID = 2.3 A
IF = 2.3 A, VGS = 0 Note3
V
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Qgs
Qgd
VDF
—
—
—
—
—
1.1
Rev.3.00 Jun 12, 2006 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
