RQK0204TGDQA
Silicon N Channel MOS FET
Power Switching
REJ03G1324-0300
Rev.3.00
Jun 12, 2006
Features
•
Low on-resistance
RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A)
Low drive current
High speed switching
•
•
•
2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
2
G
1. Source
2. Gate
3. Drain
2
S
1
Note: Marking is “TG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
20
±12
V
V
2.3
A
Note1
Drain peak current
ID(pulse)
IDR
8.0
A
Body - drain diode reverse drain current
Channel dissipation
2.3
A
Note2
Pch
Tch
Tstg
0.8
W
°C
°C
Channel temperature
150
Storage temperature
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Rev.3.00 Jun 12, 2006 page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
