RQK0204TGDQA
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
500
400
300
1000
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
VGS = 2.5 V
4.5 V
100
2.3 A
10 V
200
100
0
1.2 A
0.8 A
0.5 A
10
0.1
0
2
4
6
8
10
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
300
200
Pulse Test
VGS = 4.5 V
ID = 2.3 A
1.2 A
250
ID = 2.3 A
1.2 A
150
200
0.8 A
150
100
50
0.8 A
0.5 A
0.5 A
100
50
Pulse Test
VGS
25 50 75 100 125 150
Case Temperature Tc ( C)
= 2.5 V
–25
0
–25
0
25 50 75 100 125 150
°
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
Forward Transfer Admittance vs.
Drain Current
10000
10
1
Pulse Test
VDS = 10 V
Pulse Test
VGS = 0 V
VDS = 20 V
–25°C
1000
100
25°C
10
Tc = 75°C
0.1
1
0.1
–25
0.01
0.01
0
25 50 75 100 125 150
0.1
1
10
Drain Current ID (A)
Case Temperature Tc (°C)
Rev.3.00 Jun 12, 2006 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
