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RQK0204TGDQATL-E 参数 Datasheet PDF下载

RQK0204TGDQATL-E图片预览
型号: RQK0204TGDQATL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET电源开关 [Silicon N Channel MOS FET Power Switching]
分类和应用: 开关电源开关
文件页数/大小: 7 页 / 102 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第1页浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第2页浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第3页浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第5页浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第6页浏览型号RQK0204TGDQATL-E的Datasheet PDF文件第7页  
RQK0204TGDQA  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
500  
400  
300  
1000  
Pulse Test  
Tc = 25°C  
Pulse Test  
Tc = 25°C  
VGS = 2.5 V  
4.5 V  
100  
2.3 A  
10 V  
200  
100  
0
1.2 A  
0.8 A  
0.5 A  
10  
0.1  
0
2
4
6
8
10  
1
10  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Static Drain to Source on State Resistance  
vs. Case Temperature  
Static Drain to Source on State Resistance  
vs. Case Temperature  
300  
200  
Pulse Test  
VGS = 4.5 V  
ID = 2.3 A  
1.2 A  
250  
ID = 2.3 A  
1.2 A  
150  
200  
0.8 A  
150  
100  
50  
0.8 A  
0.5 A  
0.5 A  
100  
50  
Pulse Test  
VGS  
25 50 75 100 125 150  
Case Temperature Tc ( C)  
= 2.5 V  
–25  
0
–25  
0
25 50 75 100 125 150  
°
Case Temperature Tc (°C)  
Zero Gate Voltage Drain current vs.  
Case Temperature  
Forward Transfer Admittance vs.  
Drain Current  
10000  
10  
1
Pulse Test  
VDS = 10 V  
Pulse Test  
VGS = 0 V  
VDS = 20 V  
–25°C  
1000  
100  
25°C  
10  
Tc = 75°C  
0.1  
1
0.1  
–25  
0.01  
0.01  
0
25 50 75 100 125 150  
0.1  
1
10  
Drain Current ID (A)  
Case Temperature Tc (°C)  
Rev.3.00 Jun 12, 2006 page 4 of 6