RJK0331DPB
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Body–drain diode reverse
recovery charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Q
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.6
3.5
80
3380
660
190
0.6
22
7.8
4.8
5.8
3.9
45
4.6
0.82
30
26
Max
—
±0.1
1
2.5
3.4
4.9
—
—
—
—
—
—
—
—
—
—
—
—
1.07
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
nC
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
GS
= 10 V
Note4
I
D
= 20 A, V
GS
= 4.5 V
Note4
I
D
= 20 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 40 A
V
GS
= 10 V, I
D
= 20 A,
V
DD
≅
10 V, R
L
= 0.5
Ω,
Rg = 4.7
Ω
I
F
= 40 A, V
GS
= 0
Note4
I
F
= 40 A, V
GS
= 0
di
F
/ dt = 100 A/
µs
REJ03G1640-0400 Rev.4.00 Apr 10, 2008
Page 2 of 6
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