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RJK0331DPB-00-J0 参数 Datasheet PDF下载

RJK0331DPB-00-J0图片预览
型号: RJK0331DPB-00-J0
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N通道功率MOS FET电源开关 [Silicon N Channel Power MOS FET Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关
文件页数/大小: 7 页 / 113 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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RJK0331DPB
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Pch (W)
I
D
(A)
60
100
10
10
0
µ
s
Channel Dissipation
µ
s
Drain Current
40
10
1 ms
PW = 10 ms
Operation in
this area is
limited by R
DS(on)
DC
Op
er
20
1
ati
on
0
50
100
150
200
Tc = 25°C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
4.5 V
10 V
Pulse Test
3.2 V
3.0 V
30
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
I
D
(A)
Drain Current
40
40
30
Drain Current
20
2.8 V
20
25°C
Tc = 75°C
–25°C
10
V
GS
= 2.6 V
10
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
Pulse Test
Drain to Source Saturation Voltage
V
DS (on)
(mV)
Pulse Test
150
30
100
10
V
GS
= 4.5 V
3
10 V
1
1
50
I
D
= 20 A
10 A
5A
0
4
8
12
16
20
3
10
30
100
300 1000
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
REJ03G1640-0400 Rev.4.00 Apr 10, 2008
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