RJK0331DPB
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
10000
3000
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
8
Ciss
1000
300
100
30
10
0
V
GS
= 0
f = 1 MHz
10
20
30
Coss
Crss
6
V
GS
= 4.5 V
I
D
= 5 A, 10 A, 20 A
4
2
0
–25
10 V
5 A, 10 A, 20 A
0
25
50
75
100 125 150
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
50
Dynamic Input Characteristics
V
DS
(V)
50
40
V
GS
V
DD
= 25 V
10 V
V
DS
Reverse Drain Current I
DR
(A)
I
D
= 40 A
Pulse Test
10 V
40
5V
16
Drain to Source Voltage
30
12
Gate to Source Voltage
30
20
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
20
40
60
80
4
10
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
100
I
AP
= 20 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1640-0400 Rev.4.00 Apr 10, 2008
Page 4 of 6
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