RJK0331DPB
Silicon N Channel Power MOS FET
Power Switching
REJ03G1640-0400
Rev.4.00
Apr 10, 2008
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 2.6 m
Ω
typ. (at V
GS
= 10 V)
•
Pb-free
•
•
•
•
•
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
Note 2
Ratings
30
±20
40
160
40
20
40
50
2.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
E
AR Note 2
Pch
θch-C
Tch
Tstg
Note3
REJ03G1640-0400 Rev.4.00 Apr 10, 2008
Page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
