Item
22.1 Features
•
•
Programming/erasing time
Number of programming
Page Revisions (See Manual for Details)
736
Description amended
•
Programming/erasing time
The flash memory programming time is t
P
ms (typ) in
128-byte simultaneous programming and t
P
/128ms per
byte. The erasing time is t
E
s (typ) per block.
Number of programming
The number of flash memory programming can be up
to N
WEC
times.
•
22.4.3 Programming/Erasing
Interface Parameters
(2) Programming/Erasing
Initialization
22.5.3
User Boot Mode
758
Description added
Line 13
The general registers R8 to R15 are stored. The general
registers R0 to R7 can be used without being stored.
782
Description added
Line 3
When the reset start is executed in user boot mode, the
check routine for flash-memory related registers runs.
While the check routine is running, the RAM area about
1.2 kbytes from H'FFFF6800 is used by the routine and 4
bytes from H'FFFFDFFC is used as a stack area. NMI
and all other interrupts cannot be accepted. Neither can
the AUD be used in this period. This period is
approximately 100
µ
s while operating at an internal
frequency of 40 MHz.
(1) User Boot Mode Initiation
22.7 Flash Memory Emulation 791
in RAM
Note: Description added
Note: Setting the RAMS bit to 1 puts all the blocks in flash
memory in the programming/erasing-protected
state regardless of the values of the RAM2 to
RAM0 bits (emulation protection). Clear the RAMS
bit to 0 before actual programming or erasure.
RAM emulation can be performed when the user
boot MAT is selected. However,
programming/erasing user boot MAT can be
performed only in boot mode or program mode.
Rev.2.0, 07/03, page xiii of xxxviii
RENESAS [ RENESAS TECHNOLOGY CORP ]
