Section 22 Electrical Characteristics
Values
Typ.
—
Test
Item
Symbol Condition
Min.
Max.
Unit
Erasing
Wait time after setting SWE
x
y
z
α
β
γ
1
—
µs
bit*1
Wait time after setting ESU
100
10
10
10
20
2
—
—
—
—
—
—
—
—
—
—
µs
bit*1
Wait time after setting E
100
—
ms
µs
bit*1*6
Wait time after clearing E
bit*1
Wait time after clearing ESU
—
µs
bit*1
Wait time after setting EV
—
µs
bit*1
Wait time after
ε
—
µs
dummy write*1
Wait time after clearing EV
η
4
—
µs
bit*1
Wait time after clearing SWE θ
bit*1
Maximum erase count *1*6*7
100
—
—
µs
N
120
Times
Notes: 1. Make the time settings in accordance with the program/erase algorithms.
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in flash
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
3. The time required to erase one block. (Indicates the time for which the E bit in flash
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
4. Programming time maximum value (tP(max.)) = wait time after P bit setting (z) ×
maximum programming count (N)
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
and z3 so that it does not exceed the programming time maximum value (tP(max.)). The
wait time after setting P bit (z1, z2) should be changed as follows according to the value
of the programming count (n).
Programming count (n)
1 ≤ n ≤ 6
z1 = 30 µs
7 ≤ n ≤ 1000 z2 = 200 µs
6. Erase time maximum value (tE(max.)) = wait time after E bit setting (z) × maximum
erase count (N)
7. Set the maximum erase count (N) according to the actual set value of (z) so that it does
not exceed the erase time maximum value (tE(max.)).
Rev. 3.00 Sep. 10, 2007 Page 452 of 528
REJ09B0216-0300
RENESAS [ RENESAS TECHNOLOGY CORP ]
