Section 22 Electrical Characteristics
22.3.6
Flash Memory Characteristics
Table 22.18 Flash Memory Characteristics
VCC = 3.0 to 3.6 V, VSS = 0.0 V, Ta = -20 to +75°C/-40 to +85°C, unless otherwise indicated.
Values
Test
Item
Symbol Condition
Min.
Typ.
Max.
200.0
20.0
—
Unit
ms
Programming time (per 128 bytes)*1*2*4
Erase time (per block) *1*3*6
Reprogramming count
tP
—
7.0
tE
—
10.0
10000
—
ms
NWEC
x
1000
1
Times
µs
Programming Wait time after setting SWE
—
bit*1
Wait time after setting PSU
y
50
—
—
µs
bit*1
Wait time after setting P bit z1
1 ≤ n ≤ 6
28
198
8
30
32
µs
µs
µs
*1*4
z2
z3
7 ≤ n ≤ 1000
200
10
202
12
Additional-
programming
Wait time after clearing P
α
β
γ
5
—
—
—
—
—
—
—
—
µs
bit*1
Wait time after clearing PSU
5
—
µs
bit*1
Wait time after setting PV
4
—
µs
bit*1
Wait time after dummy
ε
2
—
µs
write*1
Wait time after clearing PV
η
2
—
µs
bit*1
Wait time after clearing SWE θ
bit*1
100
—
—
µs
Maximum programming
N
1000
Times
count *1*4*5
Rev. 3.00 Sep. 10, 2007 Page 451 of 528
REJ09B0216-0300
RENESAS [ RENESAS TECHNOLOGY CORP ]
