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HD6417750SBP200 参数 Datasheet PDF下载

HD6417750SBP200图片预览
型号: HD6417750SBP200
PDF下载: 下载PDF文件 查看货源
内容描述: 的SuperH RISC引擎 [SuperH RISC engine]
分类和应用: 外围集成电路时钟
文件页数/大小: 1039 页 / 6201 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Control signals required in this connection are 5$6, &$6, RD/:5, &66, DQM0DQM7, and  
CKE. &65 is not used.  
Do not use partial-sharing mode. If you use this, correct operation is not guaranteed.  
SH7750R  
CKIO  
CKE  
CLK  
CKE  
CLK  
CKE  
CLK  
CKE  
CLK  
CKE  
CS3  
RAS  
CS  
RAS  
CS  
RAS  
CS  
RAS  
CS  
RAS  
CASS  
RD/WR  
A17  
CAS  
WE  
CAS  
WE  
CAS  
WE  
CAS  
WE  
BANK1  
BANK0  
A12–A0  
I/O15–I/O0  
DQMU  
DQML  
BANK1  
BANK0  
A12–A0  
I/O15–I/O0  
DQMU  
DQML  
BANK1  
BANK0  
A12–A0  
I/O15–I/O0  
DQMU  
DQML  
BANK1  
BANK0  
A12–A0  
I/O15–I/O0  
DQMU  
DQML  
A16  
A15–A3  
D63–D48  
DQM7  
DQM6  
D47–D32  
DQM5  
DQM4  
D31–D16  
DQM3  
DQM2  
D15–D0  
DQM1  
DQM0  
Figure 13.45 Example of the Connection of Synchronous DRAM with 64-bit Bus Width  
(256 Mbits)  
13.3.6 Burst ROM Interface  
Setting bits A0BST2–A0BST0, A5BST2–A5BST0, and A6BST2–A6BST0 in BCR1 to a non-  
zero value allows burst ROM to be connected to areas 0, 5, and 6. The burst ROM interface  
provides high-speed access to ROM that has a burst access function. The timing for burst access to  
burst ROM is shown in figure 13.46. Two wait cycles are set. Basically, access is performed in the  
same way as for SRAM interface, but when the first cycle ends, only the address is changed before  
the next access is executed. When 8-bit ROM is connected, the number of consecutive accesses  
can be set as 4, 8, 16, or 32 with bits A0BST2–A0BST0, A5BST2–A5BST0, or A6BST2–  
A6BST0. When 16-bit ROM is connected, 4, 8, or 16 can be set in the same way. When 32-bit  
ROM is connected, 4 or 8 can be set.  
5'< pin sampling is always performed when one or more wait states are set.  
The second and subsequent access cycles also comprise two cycles when a burst ROM setting is  
made and the wait specification is 0. The timing in this case is shown in figure 13.47.  
A write operation for the burst ROM interface is performed as if the SRAM interface is selected.  
Rev. 6.0, 07/02, page 441 of 986  
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