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HD6417750SBP200 参数 Datasheet PDF下载

HD6417750SBP200图片预览
型号: HD6417750SBP200
PDF下载: 下载PDF文件 查看货源
内容描述: 的SuperH RISC引擎 [SuperH RISC engine]
分类和应用: 外围集成电路时钟
文件页数/大小: 1039 页 / 6201 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Signals used for connection when DRAM is connected to area 3 are 5$6, &$63 to &$6:, and  
RD/:5. &$65 to &$6: are not used when the data width is 16 bits. When DRAM is connected  
to areas 2 and 3, the signals for area 2 DRAM connection are 5$65, &$67 to &$6:, and RD/:5,  
and those for area 3 DRAM connection are 5$6, &$63 to &$66, and RD/:5.  
In addition to normal read and write access modes, fast page mode is supported for burst access.  
For DRAM connected to areas 2 and 3, EDO mode, which enables the DRAM access time to be  
increased, is supported.  
1M × 16-bit  
DRAM  
SH7750 Series  
A12–A3  
A9–A0  
RD/  
I/O15–I/O0  
D63–D48  
A9–A0  
D47–D32  
D31–D16  
D15–D0  
I/O15–I/O0  
A9–A0  
I/O15–I/O0  
A9–A0  
I/O15–I/O0  
Figure 13.14 Example of DRAM Connection (64-Bit Data Width, Area 3)  
Rev. 6.0, 07/02, page 396 of 986  
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