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HD6417750SBP200 参数 Datasheet PDF下载

HD6417750SBP200图片预览
型号: HD6417750SBP200
PDF下载: 下载PDF文件 查看货源
内容描述: 的SuperH RISC引擎 [SuperH RISC engine]
分类和应用: 外围集成电路时钟
文件页数/大小: 1039 页 / 6201 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Read-Strobe Negate Timing (Setting Only Possible in the SH7750R): When the SRAM  
interface is used, timing for the negation of the strobe during read operations can be specified by  
the setting of the A1RDH and A4RDH bits of the WCR3 register. For information about this  
setting, see the description of the WCR3 register. When a byte control SRAM setting is made,  
AnRDH should be cleared to 0.  
TS1  
T1  
Tw  
Tw  
Tw  
Tw  
T2  
TH1 TH2  
CKIO  
A25ÐA0  
CSn  
RD/WR  
*
D63ÐD0  
BS  
Tw: Access wait  
WCR2.AnW  
(0 to 15)  
TH1, TH2: Hold wait  
WCR3.AnH  
(0 to 3)  
TS1: Setup wait  
WCR3.AnS  
(0 to 1)  
Note: * When AnRDH is set to 1  
Figure 13.13 SRAM Interface Read-Strobe Negate Timing  
(AnS = 1, AnW = 4, AnH = 2)  
13.3.4 DRAM Interface  
Direct Connection of DRAM: When the memory type bits (DRAMTP2–0) in BCR1 are set to  
100, area 3 becomes DRAM space; when set to 101, area 2 and area 3 become DRAM space. The  
DRAM interface function can then be used to connect DRAM to the SH7750.  
16, 32, or 64 bits can be selected as the interface data width for area 3 when bits DRAMTP2–0 are  
set to 100, and 16 or 32 bits can be used for both area 2 and area 3 when bits DRAMTP2–0 are set  
to 101.  
2-CAS 16-bit DRAMs can be connected, since &$6 is used to control byte access.  
Rev. 6.0, 07/02, page 395 of 986  
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