MIL-PRF-19500/355M
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
of MIL-PRF-19500)
(1) 3c
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Measurement
JANS level
Thermal response, method 3131 of
MIL-STD-750
I
CBO2
, h
FE3
,
JANTX and JANTXV levels
Thermal response, method 3131 of
MIL-STD-750
Not applicable
h
FE
2
−
1
h
FE
2
−
2
10
11
48 hours minimum
I
CBO2
, h
FE3
,
48 hours minimum
I
CBO2
, h
FE3
,
h
FE
2
−
1
h
FE
2
−
2
h
FE
2
−
1
h
FE
2
−
2
∆I
CBO2
= 100 percent of initial value
or 1 nA dc, whichever is greater.
∆h
FE3
=
±20
percent.
12
13
See 4.3.1
Subgroups 2 and 3 of table I herein;
∆I
CBO2
= 100 percent of initial value
or 1 nA dc, whichever is greater;
∆h
FE3
=
±25
percent.
See 4.3.1
Subgroup 2 of table I herein;
∆I
CBO2
= 100
percent of initial value or 1 nA dc, whichever is
greater;
∆h
FE3
=
±25
percent.
(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in
screening requirements.
4.3.1 Power burn-in conditions. V
CB
= 10 - 30 Vdc. Power shall be applied to achieve T
J
=135°C minimum and
using a minimum P
D
= 75% of P
T
maximum rated as defined in 1.3. With approval of the qualifying activity and
preparing activity, alternate burn-in criteria (hours, bias conditions, T
J
, and mounting conditions) may be used for
JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the
manufacturing site’s burn-in data and performance history will be essential criteria for burn-in modification approval.
* 4.3.2 Thermal response. For very small junction devices such as this, the term “thermal response” shall be used
in lieu of “thermal impedance” although measurements shall be performed the same manner as thermal impedance in
accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining I
M
, I
H
, t
H
, t
SW
(V
C
and V
H
where appropriate). Measurement delay time (t
MD
) = 70
µs
max. See table II, group E, subgroup 4 and
figures 5 and 6 herein.
4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
9
RAYTHEON [ RAYTHEON COMPANY ]
