MIL-PRF-19500/355M
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb, group B,
subgroup 1 is not required to be performed again if group B has already been satisfied in accordance
with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
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4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points)
and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.8 herein. See 4.4.2.2 for JAN,
JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN,
JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and 4.5.8
herein.
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4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup
B4
Method
1037
Condition
VCB = 10 V dc.
B5
1027
VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure
occurs, resubmission shall be at the test conditions of the original sample.)
Option 1: 96 hours min, sample size in accordance with table E-VIa of MIL-PRF-19500,
adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours min., sample size = 45, c = 0; adjust TA to achieve TJ = +225°C
minimum.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic
failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a
failure is identified as wafer lot or wafer processing related, the entire wafer lot and related devices assembled from
the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode has
been implemented and the devices from the wafer lot are screened to eliminate the failure mode.
Step
1
Method
1026
Condition
Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to achieve
TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as defined
in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time
decreased as long as the devices are stressed for a total of 45,000 device hours minimum,
and the actual time of test is at least 340 hours.
2
3
1048
1032
Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
n = 45 devices, c = 0.
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
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RAYTHEON [ RAYTHEON COMPANY ]
