MIL-PRF-19500/355M
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Testing of units. All specified electrical tests, including end-point tests, shall be performed equally on both
sections of the transistor types covered herein, except where the electrical characteristic being evaluated applies to
the transistor as a device entity.
4.5.3 Disposition of leads when testing characteristics of each section. During the measurement of the
characteristics of each section, the leads of the section not under test shall be open-circuited.
4.5.4 Forward-current-gain ratio. The value for the forward-current-gain ratio for each individual section of a dual
unit shall be measured using method 3076 of MIL-STD-750. The forward-current-gain ratio shall be calculated by
dividing one of the values by the other. If possible, this ratio shall be measured directly to improve accuracy.
4.5.5 Base-emitter-voltage differential. The base-emitter-voltage differential shall be determined by connecting
the emitters of the individual sections together, applying specified electrical test conditions to each individual section
in accordance with method 3066 of MIL-STD-750, test condition B, and measuring the absolute value of the voltage
between the bases of the individual sections of a dual unit.
4.5.6 Base-emitter-voltage differential change with temperature. The value of the base-emitter-voltage differential
shall be measured at the two specified temperatures in accordance with 4.5.5 except that the polarities of the
differentials and identities of the individual sections shall be maintained. The absolute value of the algebraic
difference between the values at the two temperature extremes shall be calculated. A mathematical formula for this
parameter is:
|(VBE1 (T1) - VBE2 (T1)) - (VBE1 (T2) - VBE2 (T2)) |
4.5.7 Noise figure test. Noise figure shall be measured using Quan Tech Laboratories test set model no.
2173C/2181, or equivalent. Conditions shall be as specified in table I.
4.5.8 Delta requirements. Delta requirements shall be as specified below:
Step
1
Inspection
MIL-STD-750
Conditions
Symbol
Limit
Method
3036
Min
Max
Collector-base
cutoff current
Bias condition D,
VCB = 45 V dc
100-percent of initial
value or 1 nA dc,
∆ICBO2
whichever is greater.
2
Forward current
transfer ratio
3076
±25 percent change
from initial reading.
∆hFE3
VCE = 5 V dc; IC = 1 mA dc;
pulsed, see 4.5.1
12
RAYTHEON [ RAYTHEON COMPANY ]
