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SS2625B1-10 参数 Datasheet PDF下载

SS2625B1-10图片预览
型号: SS2625B1-10
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 2MX36, 5ns, CMOS, PBGA119, PLASTIC, BGA-119]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 30 页 / 218 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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72Mbit Pipelined BSRAM
w/ NoBL Architecture
2Mx36
Pin Descriptions
Symbol
CLK
CKE#
CE1#,
CE2,
CE3#
LD#
Preliminary Data Sheet
Type
Input
Input
Input
Function
Clock: All input signals (except G#) and output signals are referenced to the rising edge of CLK.
Clock Enable: This active low input enables the internal clock signal. If CKE# is driven high, the chip
ignores the clock (all signals except G#) and suspends pending operations.
Chip Enable Inputs: These inputs determine whether the RAM begins a read, write, or deselect
cycle. When qualified by LD# low, all three inputs must be true to select the chip and begin a read or
write cycle. When qualified by LD# low, at least one chip enable input must be false to begin a
deselect cycle.
Load Input: This active low input loads the external address, and begins a new read or write cycle.
Once a read or write cycle is initiated, LD# must be negated to advance the internal burst counter.
LD# cannot be asserted for two consecutive clocks.
Read/Write Input: When LD# is asserted and the chip is enabled, this input determines whether the
chip begins a read (R/W# high) or write (R/W# low) cycle.
Byte Write Inputs: These active low inputs allow write data to be written (BW
x
# low) or masked
(BW
x
# high) during write cycles. During read and deselect cycles, the BW
x
# inputs are ignored.
BW
a
# controls DQ
a
, BW
b
# controls DQ
b
, BW
c
# controls DQ
c
, and BW
d
# controls DQ
d
.
Address Inputs: Used to select a starting burst address location. The address inputs are sampled
when LD# is low and the chip is enabled. Inputs A1 and A0 determine the starting address for all
burst cycles.
Data I/O Inputs: These pins deliver output data during burst read cycles. Output data is valid t
CO
from the rising edge of the clock. These data pins also allow input write data to be written to the
chip. Input data must satisfy setup and hold timing specifications.
Output Enable Input: This active low input enables the output data buffers to drive output data
during read cycles. When negated, G# three states the data bus. The data output pins are
automatically three stated during write and deselect cycles.
Linear Burst Order Input: This signal must remain in steady state.
Low – Linear burst.
High – Interleaved burst.
Do Not Use Input: These unused pins may be left open circuit, and should be reserved for future
address pins.
Test Clock: Input clock for boundary scan. If boundary scan is not used, TCK must be tied to V
SS
.
Test Mode Select: This input controls the TAP controller and is sampled on the rising edge of TCK.
Test Data In: This is the serial data input for boundary scan testing.
Test Data Out: This is the serial data output for boundary scan testing.
Core Power Supply: Connect to 3.3V or 2.5V.
I/O Power Supply: Connect to 3.3V (only on V
DD
= 3.3V devices) or 2.5V.
Ground: V
SS
and V
SSQ
are connected inside the chip.
No Connect: - These pins do not connect to the chip.
Input
R/W#
BW
[a:d]
#
Input
Input
A, A1, A0
Input
DQ
[a:d]
Input/
Output
Input
G#
LBO#
Input
DNU
TCK
TMS
TDI
TDO
V
DD
V
DDQ
V
SS,
V
SSQ
NC
Input
Input
Input
Input
Output
Supply
Supply
Supply
-
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095;
http://www.edram.com
Copyright 2001 Enhanced Memory Systems. All rights reserved.
The information contained herein is subject to change without notice.
Page 4 of 30
Revision 1.0