SS2625B1-10 参数 Datasheet PDF下载

72Mbit Pipelined BSRAM

w/ NoBL Architecture

2Mx36

Preliminary Data Sheet

Electrical Characteristics

Absolute Maximum Ratings

Description

Power Supply Voltage (3.3V device)

Power Supply Voltage (2.5V device)

Voltage on any Pin with Respect to Ground

Operating Temperature (ambient)

Storage Temperature

Power Dissipation

Symbol

V

DD3

V

DD2

V

IN

, V

OUT

T

A

T

stg

P

D

Value

-0.5V to +4.6V

-0.5V to +3.6V

-0.5V to V

DDQ

+0.5V

-55°C to +125°C

-65°C to +150°C

1.2 W (TQFP), 1.6 W (PBGA)

DC Output Current (I/O pins)

I

OUT

20mA

Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating

only, and the functional operation of the device at these, or any other conditions above those listed in the operational section of the

specification, is not implied. Exposure to conditions at absolute maximum ratings for extended periods may affect device reliability.

DC Characteristics (T

A

= 0°C to 70°C)

°

°

Symbol

V

DD3

V

DDQ3

V

DD2

V

DDQ2

V

IHDQ

V

IH1

V

IL1

V

IH2

V

IL2

V

OH3

V

OL3

V

OH2

V

OL2

I

I(L)

I

O(L)

Parameter

Power Supply Voltage

I/O Supply Voltage

Power Supply Voltage

I/O Supply Voltage

Input High Voltage (DQ pins)

Input High Voltage (Input-only pins)

Input Low Voltage

Input High Voltage (Input-only pins)

Input Low Voltage

Output High Voltage (I

OUT

= -4mA)

Output Low Voltage (I

OUT

= +8mA)

Output High Voltage (I

OUT

= -4mA)

Output Low Voltage (I

OUT

= +4mA)

Input Leakage Current

Output Leakage Current

Min

3.135

2.375

2.375

2.375

2.0

2.0

-0.3

1.7

-0.3

2.4

V

SS

2.0

V

SS

-

-

Typical

3.3

-

2.5

2.5

-

-

-

-

-

-

-

-

-

-

-

Max

3.465

3.465

2.625

2.625

V

DDQ

+ 0.3

V

DD

+ 0.3

0.8

V

DD

+ 0.3

0.7

V

DDQ

0.4

V

DDQ

0.4

±5

±5

Units

V

V

V

V

V

V

V

V

V

V

V

V

V

µA

µA

1, 3

1, 3

2, 4

2, 4

3

3

4

4

Notes

1

1

2

2

Notes:

1. Applies to SM2625Q and SM2625B 3.3V devices.

2. Applies to SM2625Q1 and SM2625B1 2.5V devices.

3. V

DDQ

= 3.3V

±

5%.

4. V

DDQ

= 2.5V

±

5%.

Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921

PHONE: (800) 545-DRAM; FAX: (719) 488-9095;

http://www.edram.com

Copyright 2001 Enhanced Memory Systems. All rights reserved.

The information contained herein is subject to change without notice.

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