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HYS64T256022EDL-2.5-B 参数 Datasheet PDF下载

HYS64T256022EDL-2.5-B图片预览
型号: HYS64T256022EDL-2.5-B
PDF下载: 下载PDF文件 查看货源
内容描述: 200针双芯片小外形- DDR2 -SDRAM模块 [200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 40 页 / 2384 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Parameter  
Symbol  
DDR2–533  
Min.  
Unit  
Note  
1)2)3)4)5)6)7)  
Max.  
Data hold skew factor  
tQHS  
tREFI  
tREFI  
tRFC  
400  
7.8  
3.9  
ps  
µs  
µs  
ns  
14)15)  
16)18)  
17)  
Average periodic refresh Interval  
Average periodic refresh Interval  
Auto-Refresh to Active/Auto-Refresh  
command period  
127.5  
Precharge-All (4 banks) command period  
Precharge-All (8 banks) command period  
Read preamble  
tRP  
t
RP + 1tCK  
ns  
ns  
tCK  
tCK  
ns  
tRP  
15 + 1tCK  
0.9  
14)  
tRPRE  
tRPST  
tRRD  
1.1  
0.60  
14)  
Read postamble  
0.40  
14)18)  
Active bank A to Active bank B command  
period  
7.5  
16)22)  
Active bank A to Active bank B command  
period  
tRRD  
10  
ns  
Internal Read to Precharge command delay  
Write preamble  
tRTP  
7.5  
ns  
tCK  
tCK  
ns  
tWPRE  
tWPST  
tWR  
0.25  
0.40  
15  
19)  
Write postamble  
0.60  
Write recovery time for write without Auto-  
Precharge  
20)  
21)  
Internal Write to Read command delay  
tWTR  
7.5  
2
ns  
Exit power down to any valid command  
(other than NOP or Deselect)  
tXARD  
tCK  
21)  
Exit active power-down mode to Read  
command (slow exit, lower power)  
tXARDS  
tXP  
6 – AL  
2
tCK  
tCK  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
Exit Self-Refresh to non-Read command  
Exit Self-Refresh to Read command  
tXSNR  
tXSRD  
WR  
t
RFC +10  
200  
WR/tCK  
ns  
tCK  
tCK  
22)  
Write recovery time for write with Auto-  
Precharge  
t
1) For details and notes see the relevant Qimonda component data sheet  
2)  
DDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ±0.1 V. See notes 5)6)7)8)  
V
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS/ RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
7) The output timing reference voltage level is VTT  
.
8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to  
the WR parameter stored in the MR.  
9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode.  
10) For timing definition, refer to the Component data sheet.  
11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate  
mis-match between DQS / DQS and associated DQ in any given cycle.  
Rev. 1.0, 2006-11  
25  
11172006-DXYK-2PPW  
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