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HYS64T256022EDL-2.5-B 参数 Datasheet PDF下载

HYS64T256022EDL-2.5-B图片预览
型号: HYS64T256022EDL-2.5-B
PDF下载: 下载PDF文件 查看货源
内容描述: 200针双芯片小外形- DDR2 -SDRAM模块 [200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 40 页 / 2384 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Parameter  
Symbol  
DDR2–667  
Min.  
Unit  
Note  
1)2)3)4)5)6)7)8)  
Max.  
28)29)  
28)30)  
31)  
Read preamble  
Read postamble  
tRPRE  
tRPST  
tRRD  
0.9  
0.4  
7.5  
1.1  
0.6  
tCK.AVG  
tCK.AVG  
ns  
Active to active command period for 1KB page  
size products  
31)  
31)  
Active to active command period for 2KB page  
size products  
tRRD  
10  
ns  
Internal Read to Precharge command delay  
Write preamble  
tRTP  
7.5  
0.35  
0.4  
15  
0.6  
ns  
tWPRE  
tWPST  
tWR  
tCK.AVG  
tCK.AVG  
ns  
Write postamble  
31)  
Write recovery time  
31)32)  
Internal write to read command delay  
Exit power down to read command  
tWTR  
tXARD  
7.5  
2
ns  
nCK  
nCK  
Exit active power-down mode to read command tXARDS  
7 – AL  
(slow exit, lower power)  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
tXP  
2
nCK  
31)  
Exit self-refresh to a non-read command  
Exit self-refresh to read command  
tXSNR  
tXSRD  
t
RFC +10  
ns  
200  
nCK  
nCK  
Write command to DQS associated clock edges WL  
RL–1  
1) For details and notes see the relevant Qimonda component data sheet  
2)  
V
DDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)  
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
7) The output timing reference voltage level is VTT  
.
8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock  
under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and  
DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command  
may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min)  
.
9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output  
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272  
ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and  
tDQSCK.MAX(DERATED) = tDQSCK.MAX tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED)  
= - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!)  
10) Input clock jitter spec parameter. These parameters are referred to as 'input clock jitter spec parameters' and these parameters apply to  
DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution.  
11) These parameters are specified per their average values, however it is understood that the relationship between the average timing and  
the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations ).  
12) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the  
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during  
the time period of tIS + 2 x tCK + tIH.  
13) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result  
of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For  
DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.  
Rev. 1.0, 2006-11  
21  
11172006-DXYK-2PPW  
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