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HYS64T256022EDL-2.5-B 参数 Datasheet PDF下载

HYS64T256022EDL-2.5-B图片预览
型号: HYS64T256022EDL-2.5-B
PDF下载: 下载PDF文件 查看货源
内容描述: 200针双芯片小外形- DDR2 -SDRAM模块 [200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 40 页 / 2384 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can  
be greater than the minimum specification limits for tCL and tCH).  
13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving  
(tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These  
parameters are verified by design and characterization, but not subject to production test.  
14) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C  
and 95 °C.  
15) 0 °CTCASE 85 °C  
16) 85 °C < TCASE 95 °C  
17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device.  
18) The tRRD timing parameter depends on the page size of the DRAM organization. See Table 2 “Ordering Information for RoHS  
Compliant Products” on Page 4.  
19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system  
performance (bus turnaround) degrades accordingly.  
20) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies ≤ 200 ΜΗz.  
21) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In “standard active power-  
down mode” (MR, A12 = “0”) a fast power-down exit timing tXARD can be used. In “low active power-down mode” (MR, A12 =”1”) a slow  
power-down exit timing tXARDS has to be satisfied.  
22) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded  
up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK  
refers to the application clock period. WR refers to the WR parameter stored in the MRS.  
3.3.3  
ODT AC Electrical Characteristics  
ODT AC Character. & Operating Conditions: Table 18 for DDR2–800 & DDR2–667 and Table 19 for DDR2–533  
TABLE 18  
ODT AC Character. and Operating Conditions for DDR2-800 and DDR2-667  
Symbol  
Parameter / Condition  
Values  
Unit  
Note  
Min.  
Max.  
1)  
tAOND  
tAON  
ODT turn-on delay  
2
2
nCK  
ns  
1)2)  
1)  
ODT turn-on  
tAC.MIN  
tAC.MAX + 0.7 ns  
tAONPD  
tAOFD  
tAOF  
ODT turn-on (Power-Down Modes)  
ODT turn-off delay  
t
AC.MIN + 2 ns  
2 tCK +  
t
AC.MAX + 1 ns  
ns  
1)  
2.5  
2.5  
nCK  
ns  
1)3)  
1)  
ODT turn-off  
tAC.MIN  
tAC.MAX + 0.6 ns  
tAOFPD  
tANPD  
tAXPD  
ODT turn-off (Power-Down Modes)  
ODT to Power Down Mode Entry Latency  
ODT Power Down Exit Latency  
t
AC.MIN + 2 ns  
2.5 tCK +  
t
AC.MAX + 1 ns  
ns  
1)  
3
8
nCK  
nCK  
1)  
1) New units, 'tCK.AVG' and 'nCK', are introduced in DDR2-667 and DDR2-800. Unit 'tCK.AVG' represents the actual tCK.AVG of the input clock  
under operation. Unit 'nCK' represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2-400 and  
DDR2-533, 'tCK' is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may  
be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 × tCK.AVG+ tEPR.2PER(MIN)  
.
2) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when  
the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-667/800, tAOND is  
2 clock cycles after the clock edge that registered a first ODT HIGH counting the actual input clock edges.  
3) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.  
Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-667/800,if tCK.AVG  
=
3 ns is assumed, tAOFD= 1.5 ns (0.5 × 3 ns) after the second trailing clock edge counting from the clock edge that registered a first ODT  
LOW and by counting the actual input clock edge.  
Rev. 1.0, 2006-11  
26  
11172006-DXYK-2PPW  
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