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HYI25DC512160CE-5 参数 Datasheet PDF下载

HYI25DC512160CE-5图片预览
型号: HYI25DC512160CE-5
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Mbit的双数据速率SDRAM [512-Mbit Double-Data-Rate SDRAM]
分类和应用: 动态存储器
文件页数/大小: 30 页 / 1716 K
品牌: QIMONDA [ QIMONDA AG ]
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Preliminary Internet Data Sheet  
HYI25DC512[16/80]0CE  
512-Mbit Double-Data-Rate SDRAM  
Parameter  
Symbol –5  
DDR400B  
–6  
Unit  
Note1)/ Test  
Condition  
DDR333  
Min.  
Max.  
Min.  
Max.  
2)3)4)5)  
Write preamble  
tWPRE  
Max. (0.25 ×  
0.25 × tCK  
ns  
t
CK, 1.5 ns)  
2)3)4)5)10)  
2)3)4)5)11)  
2)3)4)5)  
Write preamble setup time  
Write postamble  
tWPRES  
tWPST  
tWR  
0
0
ns  
tCK  
ns  
tCK  
0.40  
15  
2
0.60  
0.40  
15  
1
0.60  
Write recovery time  
2)3)4)5)  
Internal write to read  
command delay  
tWTR  
2)3)4)5)  
2)3)4)5)  
Exit self-refresh to non-read  
command  
tXSNR  
tXSRD  
75  
75  
ns  
Exit self-refresh to read  
command  
200  
200  
tCK  
1) -40 °C TA 85 °C; VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V  
2) Input slew rate 1 V/ns  
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals  
other than CK/CK, is VREF. CK/CK slew rate are 1.0 V/ns.  
4) Inputs are not recognized as valid until VREF stabilizes.  
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT  
6) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time.  
7) HZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific  
voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).  
8) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns, measured  
between VIH(ac) and VIL(ac)  
.
t
.
9) These parameters guarantee device timing, but they are not necessarily tested on each device.  
10) The specific requirement is that DQS be valid (HIGH,LOW, or some point on a valid transition) on or before this CK edge. A valid transition  
is defined as monotonic and meeting the input slew rate specificationsof the device. When no writes were previously in progress on the  
bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW at this time, depending  
on tDQSS  
.
11) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system  
performance (bus turnaround) degrades accordingly.  
Rev. 0.7, 2006-12  
23  
11292006-TAIE-H645  
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