Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
FIGURE 41
AC Overshoot and Undershoot Definition
3.0
2.5
2.0
1.5
1.0
0.5
0
Overshoot
VDD
Max. Amplitude = 0.9V
Max. Area = 3V-ns
VSS
-0.5
-1.0
-1.5
Undershoot
0
1
2
3
4
5
6
7
time (ns)
3.3
Operating Currents
TABLE 26
Maximum Operating Currents
Parameter & Test Conditions
Symbol
Values
Values
Unit Note1)2)
3)4)
- 6
- 7.5
5)
Operating one bank active-precharge current:
IDD0
95/90/75
75/65/55 mA
t
RC = tRCmin; tCK = tCKmin; CKE is HIGH; CS is HIGH between valid
commands; address inputs are SWITCHING; data bus inputs are
STABLE
Precharge power-down standby current:
all banks idle, CKE is LOW; CS is HIGH, tCK = tCKmin; address and
control inputs are SWITCHING; data bus inputs are STABLE
IDD2P
1.40
1.20
1.40
1.20
mA
mA
Precharge power-down standby current with clock stop:
all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH;
address and control inputs are SWITCHING; data bus inputs are
STABLE
IDD2PS
Precharge non power-down standby current:
all banks idle, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and
control inputs are SWITCHING; data bus inputs are STABLE
IDD2N
36
30
mA
mA
Precharge non power-down standby current with clock stop:
all banks idle, CKE is HIGH, CS is HIGH, CK = LOW, CK = HIGH;
address and control inputs are SWITCHING; data bus inputs are
STABLE
IDD2NS
3.0
3.0
Rev.1.0, 2007-03
58
10242006-Y557-TZXW
QIMONDA [ QIMONDA AG ]
