Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
TABLE 22
Electrical Characteristics
Parameter
Symbol
Values
Unit Note
min.
max.
1)2)
Power Supply Voltage
VDD
1.70
1.70
-1.0
-1.5
1.90
1.90
V
1)2)
2)
Power Supply Voltage for DQ Output Buffer
Input leakage current
VDDQ
IIL
V
1.0
1.5
µΑ
µA
2)
Output leakage current
IOL
Address and Command Inputs (BA, BA1, CKE, CS, RAS, CAS, WE)
2)
2)
Input high voltage
VIH
VIL
0.8 × VDDQ
V
DDQ + 0.3
V
V
Input low voltage
-0.3
0.2 × VDDQ
Clock Inputs (CK, CK)
DC input voltage
2)
VIN
-0.3
VDDQ + 0.3
V
V
V
V
2)3)
2)3)
2)4)
DC input differential voltage
AC input differential voltage
AC differential cross point voltage
Data Inputs (DQ, DM, DQS)
DC input high voltage
VID(DC)
VID(AC)
VIX
0.4 × VDDQ
0.6 × VDDQ
0.4 × VDDQ
V
V
DDQ + 0.6
DDQ + 0.6
0.6 × VDDQ
2)
2)
2)
2)
VIHD(DC)
VILD(DC)
VIHD(AC)
VILD(AC)
0.7 × VDDQ
-0.3
V
DDQ + 0.3
0.3 x VDDQ
VDDQ + 0.3
V
V
V
V
DC input low voltage
AC input high voltage
0.8 × VDDQ
-0.3
AC input low voltage
0.2 × VDDQ
Data Outputs (DQ, DQS)
Output high voltage (IOH = -0.1 mA)
Output low voltage (IOL = 0.1 mA)
2)
2)
VOH
VOL
0.9 × VDDQ
–
V
V
–
0.1 × VDDQ
1) Clock Frequency (fCKmax) 166 MHz (CL = 3) not guaranteed for VDDmin = VDDQmin = 1.70V at Tcmin of extended temperature range
2) See Table 25 and Figure 41 for overshoot and undershoot definition.
3) VID is the magnitude of the difference between the input level on CK and the input level on CK.
4) The value of VIX is expected to be equal to 0.5 x VDDQ and must track variations in the DC level.
Rev.1.0, 2007-03
54
10242006-Y557-TZXW
QIMONDA [ QIMONDA AG ]
