Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
TABLE 27
Self Refresh Currents
Parameter & Test Conditions
Max.
Temperature
Symbol
Values
HYE18M1G160BF HYB18M1G160BF
Typ. Max.
Units Note
Typ.
1520
Max.
1)
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
IDD6
1800
—
—
—
µA
1020
640
560
1080
740
480
420
840
580
420
340
1020
640
560
—
1800
—
—
—
—
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
1560
—
740
480
420
—
1560
—
—
—
—
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
1340
—
—
580
420
340
1340
—
—
—
—
1) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual temperature with a much
finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for TCSR. At production test the sensor is
calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained from device characterization.
3.4
Pull-up and Pull-down Characteristics
Figure 42 shows the characteristics of full and half drive strength. It is specified under best and worst process variation
/condition. Temperature (Tcase): Minimum = 0 °C / -25°C, Maximum = 70°C; VDDQ: Minimum = 1.70 V, Maximum = 1.90 V
FIGURE 42
Full Drive Strength and Half Drive Strength
Half Drive Strength IV Curves
Full Drive Strength IV Curves
30.0
75.0
50.0
20.0
10.0
25.0
0.0
PD Min
PD Max
PU Min
PU Max
PD Min
PD Max
PU Min
PU Max
0.0
-10.0
-20.0
-30.0
0.0
0.5
1.0
1.5
0.0
0.5
1.0
1.5
-25.0
-50.0
-75.0
Rev.1.0, 2007-03
60
10242006-Y557-TZXW
QIMONDA [ QIMONDA AG ]
