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HYE18M1G16 参数 Datasheet PDF下载

HYE18M1G16图片预览
型号: HYE18M1G16
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位x16的移动DDR -RAM [1-Gbit x16 DDR Mobile-RAM]
分类和应用: 双倍数据速率
文件页数/大小: 65 页 / 3507 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet  
HY[B/E]18M1G16[0/1]BF  
1-Gbit DDR Mobile-RAM  
TABLE 21  
Pin Capacitances  
Parameter  
Symbol  
Values  
Unit  
Note  
min.  
max.  
1)2)3)  
Input capacitance: CK, CK  
CI1  
4.0  
2.0  
7.0  
6.5  
6.5  
10  
pF  
pF  
pF  
Input capacitance: all other input-only balls  
Input/output capacitance: DQ, DQS, DM  
CI2  
CIO  
1) These values are not subject to production test but verified by device characterization.  
2) Input capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer. VDD, VDDQ  
are applied and all other balls (except the ball under test) are floating. DQ’s should be in high impedance state. This may be achieved by  
pulling CKE to low level.  
3) Although DM is an input-only ball, it’s input capacitance models the input capacitance of the DQ and DQS balls.  
Rev.1.0, 2007-03  
53  
10242006-Y557-TZXW  
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