Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
3
Electrical Characteristics
3.1
Operating Conditions
TABLE 20
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
min.
max.
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
VDD
VDDQ
VIN
-0.3
-0.3
-0.3
-0.3
0
2.7
2.7
V
V
V
V
DDQ + 0.3
DDQ + 0.3
V
Output Voltage
VOUT
TC
V
Operating Case Temperature
Commercial
Extended1)
+70
+85
+150
0.7
°C
°C
°C
W
mA
TC
-25
-55
–
Storage Temperature
Power Dissipation
TSTG
PD
Short Circuit Output Current
IOUT
–
50
1) Clock Frequency (fCKmax) 166 MHz (CL = 3) not guaranteed for VDDmin = VDDQmin = 1.70V at Tcmin of extended temperature range
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage
to the integrated circuit.
Rev.1.0, 2007-03
52
10242006-Y557-TZXW
QIMONDA [ QIMONDA AG ]
