Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
FIGURE 13
Basic READ Timing Parameters for DQs
tCK
tCK
tCH
tCL
CK
CK
tDQSCK
tDQSCK
tACmax
tRPST
tRPRE
DQS
DQ
tDQSQmax
tAC
tLZ
tHZ
DO n
tQH
DO n+1 DO n+2 DO n+3
tQH
tDQSCK
tDQSCK
tACmin
tRPST
tRPRE
DQS
DQ
tDQSQmax
tAC
tLZ
tHZ
DO n
tQH
DO n+1 DO n+2 DO n+3
tQH
DO n = Data Out from column n
Burst Length = 4 in the case shown
CAS Latency = 3 in the case shown
= Don't Care
All DQ are valid tAC after the CK edge. All DQ are valid tDQSQ after the DQS edge, regardless of tAC
TABLE 11
Timing Parameters for READ Command
Parameter
Symbol
- 6
- 7.5
Unit Note
min.
2.0
max.
5.5
min.
2.0
max.
6.5
1)2)
DQ output access time from CK/CK
DQS output access time from CK/CK
DQ & DQS low-impedance time from CK/CK
DQ & DQS high-impedance time from CK/CK
DQS - DQ skew
tAC
ns
1)2)
tDQSCK
tLZ
2.0
1.0
–
5.5
–
2.0
1.0
–
6.5
–
ns
3)
ns
3)
tHZ
5.5
0.5
–
6.5
0.6
–
ns
4)
tDQSQ
tQH
tQHS
tRPRE
–
–
ns
5)
DQ / DQS output hold time from DQS
Data hold skew factor
tHP-tQHS
–
tHP-tQHS
–
ns
5)
0.65
1.1
1.1
0.6
70,000
–
0.75
1.1
1.1
0.6
70,000
–
ns
Read preamble
CL = 3
CL = 2
0.9
0.7
0.4
42
0.9
0.7
0.4
45
tCK
–
Read postamble
tRPST
tRAS
tRC
tCK
ns
ns
–
6)
ACTIVE to PRECHARGE command period
ACTIVE to ACTIVE command period
6)
60
65
Rev.1.0, 2007-03
23
10242006-Y557-TZXW