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HYE18M1G16 参数 Datasheet PDF下载

HYE18M1G16图片预览
型号: HYE18M1G16
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位x16的移动DDR -RAM [1-Gbit x16 DDR Mobile-RAM]
分类和应用: 双倍数据速率
文件页数/大小: 65 页 / 3507 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet  
HY[B/E]18M1G16[0/1]BF  
1-Gbit DDR Mobile-RAM  
TABLE 10  
Timing Parameters for ACTIVE Command  
Parameter  
Symbol  
- 6  
- 7.5  
Unit Note  
min.  
60  
max.  
min.  
65  
max.  
1)  
ACTIVE to ACTIVE command period  
ACTIVE to READ or WRITE delay  
ACTIVE bank A to ACTIVE bank B delay  
tRC  
ns  
tRCD  
tRRD  
18  
12  
22.5  
15  
ns  
ns  
1) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:  
no. of clock cycles = specified delay / clock period; round to the next higher integer.  
2.4.5  
READ  
READ bursts are initiated with a READ command, as shown  
in Figure 12.  
FIGURE 12  
READ Command  
Basic timings for the DQs are shown in Figure 13; they apply  
to all read operations.  
The starting column and bank addresses are provided with  
the READ command and Auto Precharge is either enabled or  
disabled for that burst access. If Auto Precharge is enabled,  
the row that is accessed will start precharge at the completion  
of the burst, provided tRAS has been satisfied. For the generic  
READ commands used in the following illustrations, Auto  
Precharge is disabled.  
CK  
CK  
CKE  
(High)  
CS  
RAS  
CAS  
WE  
A0-A9  
CA  
Enable AP  
AP  
A10  
Disable AP  
BA0,BA1  
BA  
= Don't Care  
BA = Bank Address  
CA = Column Address  
AP = Auto Precharge  
Rev.1.0, 2007-03  
22  
10242006-Y557-TZXW  
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