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HYE18M1G16 参数 Datasheet PDF下载

HYE18M1G16图片预览
型号: HYE18M1G16
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位x16的移动DDR -RAM [1-Gbit x16 DDR Mobile-RAM]
分类和应用: 双倍数据速率
文件页数/大小: 65 页 / 3507 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet  
HY[B/E]18M1G16[0/1]BF  
1-Gbit DDR Mobile-RAM  
FIGURE 6  
Address / Command Inputs Timing Parameters  
tCK  
tCH  
tCL  
CK  
CK  
tIS tIH  
Input  
Valid  
Valid  
Valid  
= Don't Care  
TABLE 8  
Inputs Timing Parameters  
Parameter  
Symbol  
- 6  
- 7.5  
Unit Note  
min.  
max.  
min.  
0.45  
0.45  
max.  
0.55  
1)  
Clock high-level width  
Clock low-level width  
Clock cycle time  
tCH  
tCL  
tCK  
0.45  
0.55  
tCK  
1)  
0.45  
6
0.55  
0.55  
tCK  
1)2)  
CL = 3  
CL = 2  
7.5  
15  
ns  
12  
1)3)4)5)  
Address and control input setup time  
Address and control input hold time  
Address and control input pulse width  
fast slew rate  
slow slew rate  
fast slew rate  
slow slew rate  
tIS  
1.1  
1.3  
1.1  
1.3  
2.7  
1.3  
1.5  
1.3  
1.5  
3.0  
ns  
1)3)6)  
1)3)4)  
tIH  
ns  
1)3)6)  
1)7)  
tIPW  
ns  
1) All AC timing characteristics assume an input slew rate of 1.0 V/ns.  
2) The only time that the clock frequency is allowed to change is during power-down, self-refresh or clock stop modes.  
3) The transition time for address and command inputs is measured between VIH and VIL.  
4) For command / address input slew rate 1V/ns.  
5) A CK/CK differential slew rate of 2.0 V/ns is assumed for this parameter.  
6) For command / address input slew rate 0.5 V/ns and < 1.0 V/ns.  
7) This parameter guarantees device timing. It is verified by device characterization but are not subject to production test.  
Rev.1.0, 2007-03  
18  
10242006-Y557-TZXW  
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