Data Sheet.
HY[B/E]18L512160BF-7.5
512-Mbit Mobile-RAM
Parameter & Test Conditions
Max.
Symbol
Values
Units Notes1)2)
Temperature
typ.
max.
Self Refresh Current:
Self refresh mode, quarter array
activation(PASR = 010)
85 °C
70 °C
45 °C
25 °C
IDD6
680
500
370
340
800
–
–
µA
–
–
1) 0 °C ≤ TC ≤ 70 °C (comm.); -25 °C ≤ TC ≤ 85 °C (ext.); VDD = VDDQ = 1.70 V to 1.95 V
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual temperature with a much
finer resolution that supported by the 4 distinct temperature levels as defined by JEDEC for TCSR. At production test, the sensor is
calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained from device characterization.
3.4
Pullup and Pulldown Characteristics
TABLE 29
Half Drive Strength (Default) and Full Drive Strength
Full Drive Strength
Voltag Half Drive Strength (Default)
e (V)
Pull-Down Current (mA) Pull-Up Current (mA)
Pull-Down Current (mA) Pull-Up Current (mA)
Nominal
Low
Nominal
High
Nominal
Low
Nominal
High
Nominal
Low
Nominal
High
Nominal
Low
Nominal
High
0.00
0.40
0.65
0.85
1.00
1.40
1.50
1.65
1.80
1.95
0.0
0.0
-19.7
-18.8
-18.2
-17.6
-16.7
-9.4
-6.6
-1.8
3.8
9.8
-33.4
-32.0
-31.0
-29.9
-28.7
-20.4
-17.1
-11.4
-4.8
0.0
0.0
-39.3
-37.6
-36.4
-35.1
-33.3
-18.8
-13.2
-3.5
-66.7
-63.9
-61.9
-59.8
-57.3
-40.7
-34.1
-22.7
-9.6
15.1
20.3
22.0
22.6
23.5
23.6
23.8
23.9
24.0
20.5
28.5
32.0
33.5
35.0
35.3
35.5
35.7
35.9
30.2
40.5
43.9
45.2
46.9
47.2
47.5
47.7
48.0
41.0
57.0
64.0
67.0
70.0
70.5
71.0
71.4
71.8
7.5
19.6
2.5
5.0
The above characteristics are specified under nominal process variation / conditionTemperature (Tj): Nominal = 50 °C, VDDQ
:
Nominal = 1.80 V
Rev. 1.22, 2006-12
51
01132005-06IU-IGVM
QIMONDA [ QIMONDA AG ]
