Data Sheet.
HY[B/E]18L512160BF-7.5
512-Mbit Mobile-RAM
3
Electrical Characteristics
3.1
Operating Conditions
TABLE 23
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
min.
max.
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
VDD
VDDQ
VIN
VOUT
TC
TC
TSTG
PD
-0.3
-0.3
-0.3
-0.3
0
-25
-55
–
2.7
2.7
V
V
V
V
°C
°C
°C
W
mA
V
V
DDQ + 0.3
DDQ + 0.3
Commercial
Extended
+70
+85
+150
0.7
Storage Temperature
Power Dissipation
Short Circuit Output Current
IOUT
–
50
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.Maximum ratings are
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated
circuit.
TABLE 24
Pin Capacitances
Parameter
Symbol
Values
Unit
Notes1)2)
min.
max.
Input capacitance: CLK
Input capacitance: all other input
Input/Output capacitance: DQ
Input/Output capacitance: LDQM and
UDQM
CI1
CI2
CIO
3.0
3.0
3.0
1.5
6.0
6.0
5.0
3.0
pF
pF
pF
pF
–
CIO2
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 with VDD, VDDQ applied and all other pins (except the pin under test) floating. DQ’s
should be in high impedance state. This may be achieved by pulling CKE to low level.
Rev. 1.22, 2006-12
47
01132005-06IU-IGVM
QIMONDA [ QIMONDA AG ]
