Data Sheet.
HY[B/E]18L512160BF-7.5
512-Mbit Mobile-RAM
Parameter & Test Conditions
Symbol
Valuea
Unit
Notes1)
- 7.5
Precharge non power-down standby current:
IDD2N
26
mA
–
all banks idle, CS ≥ VIHmin, CKE ≥ VIHmin
,
inputs changing once every two clock cycles
Precharge non power-down standby current with clock stop: IDD2NS
2.0
2.0
mA
mA
–
–
all banks idle, CS ≥ VIHmin, CKE ≥ VIHmin, all inputs stable
Active power-down standby current:
IDD3P
one bank active, CS ≥ VIHmin, CKE ≤ VILmax
,
inputs changing once every two clock cycles
Active power-down standby current with clock stop:
IDD3PS
1.5
30
mA
mA
–
–
one bank active, CS ≥ VIHmin, CKE ≤ VILmax, all inputs stable
Active non power-down standby current:
IDD3N
one bank active, CS ≥ VIHmin, CKE ≥ VIHmin
,
inputs changing once every two clock cycles
Active non power-down standby current with clock stop:
IDD3NS
3.0
90
mA
mA
–
–
one bank active, CS ≥ VIHmin, CKE ≥ VIHmin, all inputs stable
Operating burst read current:
all banks active; continuous burst read,
inputs changing once every two clock cycles
IDD4
Auto-Refresh current:
IDD5
180
mA
–
t
RC = tRCmin, “burst refresh”, inputs changing once every two
clock cycles
Self Refresh current:self refresh mode, CS ≥ VIHmin, CKE ≤ IDD6
ILmax, all inputs stable
Deep Power Down current
See Table 28
–
V
4)
IDD7
25
µA
1) 0 °C ≤ TC ≤ 70 °C (comm.); -25 °C ≤ TC ≤ 85 °C (ext.); VDD = VDDQ = 1.70 V to 1.95 V;Recommended Operating Conditions unless otherwise
noted
2) These values are measured with tCK = 7.5 ns
3) All parameters are measured with no output loads.
4) Value shown as typical.
TABLE 28
Self Refresh Currents
Parameter & Test Conditions
Max.
Symbol
Values
Units Notes1)2)
Temperature
typ.
max.
Self Refresh Current:
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
IDD6
1020
680
450
410
800
530
400
360
1200
–
–
–
940
–
–
µA
–
Self refresh mode, full array
activation(PASR = 000)
Self Refresh Current:
Self refresh mode, half array
activation(PASR = 001)
–
Rev. 1.22, 2006-12
50
01132005-06IU-IGVM