Data Sheet.
HY[B/E]18L512160BF-7.5
512-Mbit Mobile-RAM
TABLE 25
Electrical Characteristics
Parameter
Symbol
Values
Unit
Notes1)
min.
max.
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer VDDQ
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
VDD
1.7
1.7
0.8 × VDDQ
1.95
1.95
DDQ + 0.3
0.3
–
0.2
1.0
1.5
V
V
V
V
V
V
–
–
2)
VIH
VIL
VOH
VOL
IIL
V
-0.3
–
–
–
–
–
V
DDQ - 0.2
–
-1.0
-1.5
µΑ
IOL
µA
1) 0 °C ≤ TC ≤ 70 °C (comm.); -25 °C ≤ TC ≤ 85 °C (ext.); All voltages referenced to VSS. VSS and VSSQ must be at same potential.
2)
V
IH may overshoot to VDD + 0.8 V for pulse width < 4 ns; VIL may undershoot to -0.8 V for pulse width < 4 ns.Pulse width measured at 50%
with amplitude measured between peak voltage and DC reference level.
3.2
AC Characteristics
TABLE 26
AC Characteristics
Parameter
Symbol
- 7.5
Unit
Notes1)2)3)4)
min.
max.
Clock cycle time
Clock frequency
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
tCK
fCK
tAC
7.5
9.5
—
—
–
—
—
133
105
6.0
7.0
—
—
—
—
—
—
7.0
—
2
—
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
ns
tCK
ns
ns
ns
tCK
tCK
—
—
5)
Access time from CLK
–
Clock high-level width
Clock low-level width
tCH
tCL
tIS
tIH
tMRD
tLZ
2.5
2.5
1.5
0.8
2
1.0
3.0
2.5
—
—
—
6)
Address, data and command input setup time
Address, data and command input hold time
MODE REGISTER SET command period
DQ low-impedance time from CLK
DQ high-impedance time from CLK
Data out hold time
6)
—
—
tHZ
—
5)6)
tOH
tDQZ
tDQW
DQM to DQ High-Z delay (READ Commands)
DQM write mask latency
—
—
0
Rev. 1.22, 2006-12
48
01132005-06IU-IGVM
QIMONDA [ QIMONDA AG ]
