Internet Data Sheet
HYB39SC128[16/32]9EE
128-MBit Synchronous DRAM
4
Electrical Characteristics
4.1
Operating Conditions
TABLE 7
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Note/
Test Condition
Min.
Max.
Input / Output voltage relative to VSS
Voltage on VDD supply relative to VSS
Voltage on VDDQ supply relative to VSS
Operating Temperature
VIN, VOUT
VDD
– 0.3
– 0.3
– 0.3
0
V
DD + 0.3
V
4.6
4.6
70
V
VDDQ
TA
V
°C
°C
°C
W
mA
Storage temperature range
TSTG
TSOLDER
PD
– 55
—
150
260
1
Soldering Temperature (10s)
Power dissipation per SDRAM component
Data out current (short circuit)
—
IOUT
—
50
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated
circuit.
TABLE 8
DC Characteristics
Parameter
Symbol
Values
Max.
Unit
Note/ Test Condition
Min.
1)2)
Supply Voltage
VDD
VDDQ
VIH
3.0
3.6
3.6
V
V
V
V
1)2)
I/O Supply Voltage
Input high voltage
Input low voltage
3.0
1)2)3)
1)2)3)
2.0
V
DD + 0.3
VIL
– 0.3
0.8
1) TA = 0 to 70 ºC
2) All voltages are referenced to VSS
3)
VIH may overshoot to VDDQ + 1.2 V for pulse width of < 5ns with 3.3 V. VIL may undershoot to -1.2 V for pulse width < 5.0 ns with 3.3 V.
Pulse width measured at 50% points with amplitude measured peak to DC reference.
Rev. 1.00, 2006-10
15
10302006-7FCJ-R0SX
QIMONDA [ QIMONDA AG ]
