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HYB25DC512160DE-5A 参数 Datasheet PDF下载

HYB25DC512160DE-5A图片预览
型号: HYB25DC512160DE-5A
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 38 页 / 2394 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]25DC512[80/16]0D[E/F](L)  
512-Mbit Double-Data-Rate SDRAM  
5
Electrical Characteristics  
This chapter describes the electrical characteristics.  
5.1  
Operating Conditions  
This chapter contains the operating conditions tables.  
TABLE 18  
Absolute Maximum Ratings  
Parameter  
Symbol  
Values  
Unit Note  
Min.  
Typ. Max.  
Voltage on I/O pins relative to VSS  
Voltage on inputs relative to VSS  
Voltage on VDD supply relative to VSS  
Voltage on VDDQ supply relative to VSS  
Operating temperature (ambient)  
VIN, VOUT  
VIN  
–0.5  
–1  
1
V
DDQ + 0.5  
V
+3.6  
+3.6  
+3.6  
+70  
+85  
+150  
V
VDD  
–1  
V
VDDQ  
TA  
–1  
V
0
°C  
°C  
°C  
W
mA  
for HYB...  
–40  
–55  
for HYI...  
Storage temperature (plastic)  
TSTG  
PD  
Power dissipation (per SDRAM component)  
Short circuit output current  
IOUT  
50  
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings  
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated  
circuit.  
Rev. 1.10, 2008-05  
23  
06212007-08MW-K87L  
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