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HYB25DC512800CE-6 参数 Datasheet PDF下载

HYB25DC512800CE-6图片预览
型号: HYB25DC512800CE-6
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Mbit的双数据速率SDRAM [512-Mbit Double-Data-Rate SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率
文件页数/大小: 35 页 / 1891 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25DC512[800/160]C[E/F]  
512-Mbit Double-Data-Rate SDRAM  
5) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and  
must track variations in the DC level of VREF  
6) Inputs are not recognized as valid until VREF stabilizes.  
7) ID is the magnitude of the difference between the input level on CK and the input level on CK.  
.
V
8) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and  
voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the maximum difference between  
pull-up and pull-down drivers due to process variation.  
9) Values are shown per pin.  
Rev. 1.3, 2006-12  
22  
03292006-W2FE-ELDX  
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