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HYB25DC512800CE-6 参数 Datasheet PDF下载

HYB25DC512800CE-6图片预览
型号: HYB25DC512800CE-6
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Mbit的双数据速率SDRAM [512-Mbit Double-Data-Rate SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率
文件页数/大小: 35 页 / 1891 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25DC512[800/160]C[E/F]  
512-Mbit Double-Data-Rate SDRAM  
9) Concurrent Auto Precharge:This device supports “Concurrent Auto Precharge”. When a read with auto precharge or a write with auto  
precharge is enabled any command may follow to the other banks as long as that command does not interrupt the read or write data  
transfer and all other limitations apply (e.g. contention between READ data and WRITE data must be avoided). The minimum delay from  
a read or write command with auto precharge enable, to a command to a different banks is summarized in Table 14.  
10) A Write command may be applied after the completion of data output.  
TABLE 14  
Truth Table 5: Concurrent Auto Precharge  
From Command  
To Command (different bank)  
Minimum Delay with Concurrent Auto Unit  
Precharge Support  
WRITE w/AP  
Read or Read w/AP  
Write to Write w/AP  
Precharge or Activate  
Read or Read w/AP  
Write or Write w/AP  
Precharge or Activate  
1 + (BL/2) + tWTR  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
BL/2  
1
Read w/AP  
BL/2  
CL (rounded up) + BL/2  
1
Rev. 1.3, 2006-12  
19  
03292006-W2FE-ELDX  
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