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HYB25D256400BTL-6 参数 Datasheet PDF下载

HYB25D256400BTL-6图片预览
型号: HYB25D256400BTL-6
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Functional Description  
CAS Latency = 2  
CK  
CK  
Read  
NOP  
Read  
NOP  
NOP  
NOP  
Command  
Address  
BAa, COL n  
BAa, COL b  
CL=2  
DQS  
DQ  
DOa-b  
DOa-n  
CAS Latency = 2.5  
CK  
CK  
Read  
NOP  
Read  
NOP  
NOP  
NOP  
Command  
Address  
BAa, COL n  
BAa,COL b  
CL=2.5  
DQS  
DQ  
DOa- n  
DOa- b  
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).  
When burst length = 4, the bursts are concatenated.  
When burst length = 8, the second burst interrupts the first.  
Don’t Care  
3 subsequent elements of data out appear in the programmed order following DO a-n.  
3 (or 7) subsequent elements of data out appear in the programmed order following DO a-b.  
Shown with nominal tAC, tDQSCK, and tDQSQ  
.
Figure 11 Consecutive Read Bursts: CAS Latencies (Burst Length = 4 or 8)  
Data Sheet  
27  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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