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HYB25D256400BTL-6 参数 Datasheet PDF下载

HYB25D256400BTL-6图片预览
型号: HYB25D256400BTL-6
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Functional Description  
CAS Latency = 2  
CK  
CK  
Read  
BST  
NOP  
Write  
NOP  
NOP  
Command  
Address  
BAa, COL n  
BAa, COL b  
CL=2  
tDQSS (min)  
DQS  
DQ  
DI a-b  
DOa-n  
DM  
CAS Latency = 2.5  
CK  
CK  
Read  
BST  
NOP  
NOP  
Write  
NOP  
Command  
Address  
BAa, COL n  
BAa, COL b  
CL=2.5  
tDQSS (min)  
DQS  
DQ  
DOa-n  
Dla-b  
DM  
DO a-n = data out from bank a, column n  
.
DI a-b = data in to bank a, column b  
1 subsequent elements of data out appear in the programmed order following DO a-n.  
Data In elements are applied following Dl a-b in the programmed order, according to burst length.  
Shown with nominal tAC, tDQSCK, and tDQSQ  
.
Don’t Care  
Figure 15 Read to Write: CAS Latencies (Burst Length = 4 or 8)  
Data Sheet  
31  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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