HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Maximum DQSS
T1
T2
T3
T4
CK
CK
Write
NOP
NOP
NOP
Command
Address
BA a, COL b
tDQSS (max)
DQS
DQ
Dla-b
DM
Minimum DQSS
T4
T1
T2
T3
CK
CK
Write
NOP
NOP
NOP
Command
Address
BA a, COL b
tDQSS (min)
DQS
DQ
Dla-b
DM
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
A10 is Low with the Write command (Auto Precharge is disabled).
Don’t Care
Figure 18 Write Burst (Burst Length = 4)
Data Sheet
35
Rev. 1.21, 2004-07
02102004-TSR1-4ZWW