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HYB18TC1G800BF 参数 Datasheet PDF下载

HYB18TC1G800BF图片预览
型号: HYB18TC1G800BF
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位双数据速率- SDRAM双 [1-Gbit Double-Data-Rate-Two SDRAM]
分类和应用: 动态存储器
文件页数/大小: 65 页 / 3555 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18TC1G[80/16]0BF  
1-Gbit Double-Data-Rate-Two SDRAM  
Parameter  
Symbol  
DDR2–400  
Min.  
Unit  
Note1)2)3)4)5)  
6)  
Max.  
Data hold skew factor  
tQHS  
tREFI  
tREFI  
450  
7.8  
3.9  
ps  
µs  
µs  
ns  
13)14)  
15)17)  
16)  
Average periodic refresh Interval  
Average periodic refresh Interval  
Auto-Refresh to Active/Auto-Refresh  
command period  
127.5  
Precharge-All (4 banks) command period  
Precharge-All (8 banks) command period  
Read preamble  
tRP  
t
RP + 1tCK  
ns  
ns  
tCK  
tCK  
ns  
tRP  
15 + 1tCK  
0.9  
13)  
tRPRE  
tRPST  
tRRD  
1.1  
0.60  
13)  
Read postamble  
0.40  
13)17)  
Active bank A to Active bank B command  
period  
7.5  
15)21)  
Active bank A to Active bank B command  
period  
tRRD  
10  
ns  
Internal Read to Precharge command delay  
Write preamble  
tRTP  
7.5  
ns  
tCK  
tCK  
ns  
tWPRE  
tWPST  
tWR  
0.25  
0.40  
15  
18)  
Write postamble  
0.60  
Write recovery time for write without Auto-  
Precharge  
19)  
20)  
Internal Write to Read command delay  
tWTR  
10  
2
ns  
Exit power down to any valid command  
(other than NOP or Deselect)  
tXARD  
tCK  
20)  
Exit active power-down mode to Read  
command (slow exit, lower power)  
tXARDS  
tXP  
6 – AL  
2
tCK  
tCK  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
Exit Self-Refresh to non-Read command  
Exit Self-Refresh to Read command  
tXSNR  
tXSRD  
WR  
t
RFC +10  
200  
WR/tCK  
ns  
tCK  
tCK  
21)  
Write recovery time for write with Auto-  
Precharge  
t
1)  
VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ±0.1 V.  
2) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
3) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
4) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode. The input reference level for signals other than CK/CK, DQS/DQS,  
RDQS / RDQS is defined.  
5) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
6) The output timing reference voltage level is VTT  
.
7) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to  
the WR parameter stored in the MR.  
8) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode.  
9) For timing definition, refer to the Component data sheet.  
10) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate  
mis-match between DQS / DQS and associated DQ in any given cycle.  
Rev. 1.21, 2007-07  
51  
02282007-F8UP-4HSU  
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