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HYB18T512161B2F-25 参数 Datasheet PDF下载

HYB18T512161B2F-25图片预览
型号: HYB18T512161B2F-25
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, PLASTIC, TFBGA-84]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 37 页 / 1297 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18T512161B2F–20/25  
512-Mbit Double-Data-Rate-Two SDRAM  
Parameter  
Symbol –20  
Min.  
–25  
Unit Notes1)  
2)3)4)5)6)  
Max.  
Min.  
Max.  
OCD drive mode output delay  
Data output hold time from DQS  
Data hold skew factor  
tOIT  
0
12  
0
12  
ns  
ps  
tQH  
t
HPtQHS  
t
HPtQHS  
tQHS  
tREFI  
105  
380  
7.8  
3.9  
380  
7.8  
3.9  
13)14)  
Average periodic refresh Interval  
μs  
13)15)  
μs  
16)  
Auto-Refresh to Active/Auto-Refresh command tRFC  
105  
ns  
period  
12)  
Read preamble  
Read postamble  
tRPRE  
tRPST  
0.9  
1.1  
0.60  
0.9  
1.1  
0.60  
tCK  
12)  
0.40  
10  
0.40  
10  
tCK  
14)17)  
Active bank A to Active bank B command period tRRD  
ns  
Internal Read to Precharge command delay  
Write preamble  
tRTP  
7.5  
7.5  
ns  
tWPRE  
tWPST  
tWR  
0.35 x tCK  
0.40  
14  
0.35 x tCK  
0.40  
15  
tCK  
17)  
Write postamble  
0.60  
0.60  
tCK  
Write recovery time for write without Auto-  
Precharge  
ns  
18)  
Write recovery time for write with Auto-  
Precharge  
WR  
t
WR/tCK  
t
WR/tCK  
tCK  
19)  
Internal Write to Read command delay  
tWTR  
7.5  
2
7.5  
2
ns  
20)  
Exit power down to any valid command  
(other than NOP or Deselect)  
tXARD  
tCK  
20)  
Exit active power-down mode to Read  
command (slow exit, lower power)  
tXARDS  
tXP  
10 – AL  
2
8 – AL  
2
tCK  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
tCK  
Exit Self-Refresh to non-Read command  
tXSNR  
tXSRD  
t
RFC +10  
t
RFC +10  
ns  
Exit Self-Refresh to Read command  
200  
200  
tCK  
1) VDDQ, VDD refer to Chapter 1.  
2) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
3) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. For other Slew Rates see Chapter 5 of this  
data sheet.  
4) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross.The DQS / DQS, input reference  
level is the crosspoint when in differential strobe mode;The input reference level for signals other than CK/CK, DQS / DQS is defined in  
Chapter 5.3 of this data sheet.  
5) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
6) The output timing reference voltage level is VTT. See Chapter 5 for the reference load for timing measurements.  
7) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to  
the WR parameter stored in the MR.  
8) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode. In case of clock frequency change  
during power-down, a specific procedure is required.  
9) timing is referenced to Industrial standard definition  
10) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate  
mis-match between DQS / DQS and associated DQ in any given cycle.  
11) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can  
be greater than the minimum specification limits for tCL and tCH).  
Rev. 1.1, 2007-06  
27  
05152007-ZYAH-ACMZ  
Date: 2008-02-26  
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