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HYB18T512161B2F-25 参数 Datasheet PDF下载

HYB18T512161B2F-25图片预览
型号: HYB18T512161B2F-25
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, PLASTIC, TFBGA-84]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 37 页 / 1297 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18T512161B2F–20/25  
512-Mbit Double-Data-Rate-Two SDRAM  
Parameter  
Symbol Note  
1)2)3)4)5)6)  
Self-Refresh Current  
IDD6  
CKE 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are floating, Data  
bus inputs are floating.  
1)2)3)4)5)6)7)  
Operating Bank Interleave Read Current  
IDD7  
1. All banks interleaving reads, IOUT = 0 mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD) -1 × tCK(IDD); tCK  
CK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD); CKE is HIGH, CS is HIGH between valid commands. Address  
bus inputs are stable during deselects; Data bus is switching.  
=
t
1)  
2)  
3)  
V
DDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V  
I
I
DD specifications are tested after the device is properly initialized.  
DD parameter are specified with ODT disabled.  
4) Data Bus consists of DQ, DM, DQS, DQS, LDQS, LDQS, UDQS and UDQS.  
5) Definitions for IDD: see Table 32  
6) Timing parameter minimum and maximum values for IDD current measurements are defined in chapter 7..  
7) A = Activate, RA = Read with Auto-Precharge, D=DESELECT  
TABLE 32  
Definition for IDD  
Parameter  
Description  
LOW  
defined as VIN VIL(ac).MAX  
HIGH  
defined as VIN VIH(ac).MIN  
STABLE  
FLOATING  
SWITCHING  
defined as inputs are stable at a HIGH or LOW level  
defined as inputs are VREF = VDDQ / 2  
defined as: Inputs are changing between high and low every other clock (once per two clocks) for address  
and control signals, and inputs changing between high and low every other clock (once per clock) for DQ  
signals not including mask or strobes  
Rev. 1.1, 2007-06  
30  
05152007-ZYAH-ACMZ  
Date: 2008-02-26  
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