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HYB18T1G400C2C-3 参数 Datasheet PDF下载

HYB18T1G400C2C-3图片预览
型号: HYB18T1G400C2C-3
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, PLASTIC, TFBGA-60]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 68 页 / 3874 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T1G[40/80/16]0C2[C/F]  
1-Gbit Double-Data-Rate-Two SDRAM  
3.3  
Extended Mode Register EMR(2)  
The Extended Mode Registers EMR(2) and EMR(3) are reserved for future use and must be programmed when setting the  
mode register during initialization.  
%$ꢆ %$ꢂ %$ꢀ $ꢂꢄ $ꢂꢆ $ꢂꢂ $ꢂꢀ  
$ꢇ  
$ꢊ  
$ꢅ  
$ꢈ  
$ꢁ  
$ꢉ  
$ꢄ  
$ꢆ  
$ꢂ  
$ꢀ  
65)  
'&&  
3$65  
UHJꢍꢌDGGU  
03%7ꢀꢁꢆꢀ  
TABLE 13  
EMR(2) Programming Extended Mode Register Definition, BA2:0=010B  
Field Bits  
Type1)  
Description  
BA2  
16  
w
Bank Address  
Note: BA2 is not available on 256 Mbit and 512 Mbit components  
0B  
BA2 Bank Address  
BA  
[15:14]  
w
Bank Adress  
00B BA MRS  
01B BA EMRS(1)  
10B BA EMRS(2)  
11B BA EMRS(3): Reserved  
A
[13:8]  
7
w
w
Address Bus  
000000B A Address bits  
SRF  
Address Bus, High Temperature Self Refresh Rate for TCASE > 85°C  
0B  
1B  
A7 disable  
A7 enable 2)  
A
[6:4]  
3
w
w
Address Bus  
000B A Address bits  
DCC  
Address Bus, Duty Cycle Correction (DCC)  
0B  
1B  
A3 DCC disabled  
A3 DCC enabled  
Partial Self Refresh for 8 banks  
PASR [2:0]  
w
Address Bus, Partial Array Self Refresh for 8 Banks3)  
Note: Only for 1G and 2G components  
000B PASR0 Full Array  
001B PASR1 Half Array (BA[2:0]=000, 001, 010 & 011)  
010B PASR2 Quarter Array (BA[2:0]=000, 001)  
011B PASR3 1/8 array (BA[2:0] = 000)  
100B PASR4 3/4 array (BA[2:0]= 010, 011, 100, 101, 110 & 111)  
101B PASR5 Half array (BA[2:0]=100, 101, 110 & 111)  
110B PASR6 Quarter array (BA[2:0]= 110 & 111)  
111B PASR7 1/8 array(BA[2:0]=111)  
1) w = write only  
2) When DRAM is operated at 85°C TCase 95°C the extended self refresh rate must be enabled by setting bit A7 to 1 before the self refresh  
mode can be entered.  
Rev. 1.02, 2008-01  
24  
09262007-3YK7-BKKG  
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