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HYB18T1G400C2C-3 参数 Datasheet PDF下载

HYB18T1G400C2C-3图片预览
型号: HYB18T1G400C2C-3
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, PLASTIC, TFBGA-60]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 68 页 / 3874 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T1G[40/80/16]0C2[C/F]  
1-Gbit Double-Data-Rate-Two SDRAM  
3) If PASR (Partial Array Self Refresh) is enabled, data located in areas of the array beyond the specified location will be lost if self refresh  
is entered. Data integrity will be maintained if tREF conditions are met and no Self Refresh command is issued.  
3.4  
Extended Mode Register EMR(3)  
The Extended Mode Register EMR(3) is reserved for future use and all bits except BA0 and BA1 must be programmed to 0  
when setting the mode register during initialization.  
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TABLE 14  
EMR(3) Programming Extended Mode Register Definition, BA2:0=011B  
Field  
Bits  
Type1)  
Description  
BA2  
16  
reg.addr  
Bank Address 2  
Note: BA2 is not available on 256Mbit and 512Mbit components  
0B  
BA2 Bank Address  
BA1  
BA0  
A
15  
Bank Adress 1  
1B  
BA1 Bank Address  
14  
Bank Adress 0  
1B  
BA0 Bank Address  
[13:0]  
w
Address Bus 13:0  
00000000000000BA[13:0] Address bits  
1) w = write only  
Rev. 1.02, 2008-01  
25  
09262007-3YK7-BKKG  
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