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HYB18M256320CF-6/7.5 参数 Datasheet PDF下载

HYB18M256320CF-6/7.5图片预览
型号: HYB18M256320CF-6/7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用程序 [DRAMs for Mobile Applications]
分类和应用: 动态存储器
文件页数/大小: 26 页 / 1614 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/E]18M256[16/32]0CF  
256-Mbit DDR Mobile-RAM  
Parameter & Test Conditions  
Symbol  
IDD6  
Values  
Unit Note  
1)2)3)4)5)  
– 6  
See Table 14  
– 7.5  
Self refresh current:  
μA  
CKE is LOW; CK = LOW, CK = HIGH; address and control inputs are  
STABLE; data bus inputs are STABLE  
6)  
Deep Power Down current  
IDD8  
10  
10  
μA  
1) 0 °C TC 70 °C (comm.); -25°C TC 85 °C (ext.); VDD = 1.70 V - 1.95 V, VDDQ = 1.70 V - 1.95 V.Recommended Operating Conditions  
unless otherwise noted  
2) IDD specifications are tested after the device is properly initialized and measured at 133 MHz for -7.5 speed grade, and 166 MHz for -6  
speed grade.  
3) Input slew rate is 1.0 V/ns.  
4) Definitions for IDD:LOW is defined as VIN 0.1 * VDDQ;HIGH is defined as VIN 0.9 * VDDQ;STABLE is defined as inputs stable at a  
HIGH or LOW level;SWITCHING is defined as:- address and command: inputs changing between HIGH and LOW once per two clock  
cycles;- data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE  
5) All parameters are measured with no output loads.  
6) Value shown as typical and measured at 25 °C.  
TABLE 14  
Self Refresh Currents  
Parameter & Test Conditions  
Max. Temperature  
Symbol  
Values  
Units Note  
Typ. Max.  
1)2)  
Self refresh mode,  
Full array (PASR = 000)  
85 °C  
IDD6  
275  
145  
210  
115  
185  
100  
400  
μA  
40 °C  
85 °C  
40 °C  
85 °C  
40 °C  
Self refresh mode,  
Half array (PASR = 001)  
340  
Self refresh mode,  
Quarter array (PASR = 010)  
310  
1) -25 °C TJ 85 °C (ext.); VDD = VDDQ = 1.70V to 1.95V  
2) For commercial temperature range part (HYB), the max value indicated for 85 °C applies to 70 °C  
Rev.1.44, 2007-07  
20  
06262007-JK8G-48BV  
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