P1750AE/SOS
DC ELECTRICAL SPECIFICATIONS (Over recommended operating conditions)
1
Symbol
Parameter
Min
Max
V + 0.5
CC
Unit
Conditions
V
IH
InputHIGHLevelVoltage
2.0
V
2
V
InputLOWLevelVoltage
–0.5
2.4
0.8
V
IL
V
V
CC
V
CC
V
CC
V
CC
= 4.5V
= 4.5V
= 4.5V
= 4.5V
I
I
I
I
= –8.0mA
=–300µA
= 8.0mA
= 300µA
OH
OH
OL
OL
V
OH
OutputHIGHLevelVoltage
V
CC
– 0.2
V
0.5
0.2
V
V
OL
OutputLOWLevelVoltage
InputHIGHLevelCurrent,
V
I
except IB – IB ,
100
100
–50
–50
µA
µA
µA
µA
V
IN
V
IN
V
IN
V
IN
= V , V = 5.5V
CC CC
IH1
0
15
BUS BUSY, BUS LOCK
InputHIGHLevelCurrent,
I
IB – IB ,
= V , V = 5.5V
CC CC
IH2
0
15
BUS BUSY, BUS LOCK
InputLOWLevelCurrent,
I
IL1
except IB – IB ,
= GND, V = 5.5V
CC
0
15
BUS BUSY, BUS LOCK
InputLOWLevelCurrent,
I
IL2
IB – IB ,
= GND, V = 5.5V
CC
0
15
BUS BUSY, BUS LOCK
OutputThree-StateCurrent
OutputThree-StateCurrent
I
50
µA
µA
V
V
V
= 2.4V, V = 5.5V
CC
OZH
OUT
I
–50
= 0.5V, V = 5.5V
CC
OZL
OUT
Quiescent Power Supply
Current(CMOSInput
Levels)
< 0.2V or < V – 0.2V,
CC
IN
I
25
mA
mA
f = 0MHz, Outputs Open,
CCQC
V
CC
= 5.5V
Quiescent Power Supply
Current(TTLInput
Levels)
V
IN
< 3.4V, f = 0MHz,
I
100
OutputsOpen,
CCQT
V
CC
= 5.5V
I
DynamicPower
SupplyCurrent
20 MHz
140
150
160
mA
mA
mA
mA
pF
V
= 0V to V , tr = tf = 2.5 ns,
IN CC
CCD
25 MHz
OutputsOpen,
30 MHz
V = 5.5V
CC
3
I
Output Short Circuit Current
InputCapacitance
–25
V = GND, V = 5.5V
OUT CC
OS
C
10
15
15
IN
C
OutputCapacitance
pF
OUT
C
Bi-directionalCapacitance
pF
I/O
Notes
1. 4.5V ≤ V
≤ 5.5V, –55°C ≤ T ≤ +125°C. Unless otherwise specified, testing shall be conducted at worst-case conditions.
C
CC
2. V = –3.0V for pulse widths less than or equal to 20ns.
IL
3. Duration of the short should not exceed one second; only one output may be shorted at a time.
Do c um e nt # MICRO-7 REV B
Pa g e 5 o f 22
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
